Compact Physics Hot-copyright Degradation Model Valid over a Wide Bias Range

Compact Physics Hot-copyright Degradation Model Valid over a Wide Bias Range

Blog Article

We develop a compact physics model for hot-copyright degradation (HCD) that is valid over a wide range of gate and drain voltages (Vgs and Vds, respectively).Special attention is paid to the contribution of secondary carriers (generated by Turntable Drive Button impact ionization) to HCD, which was shown to be significant under stress conditions with low Vgs and relatively high Vds.Implementation of this contribution is based on refined modeling of copyright transport for both primary and secondary carriers.To validate Dresser and Mirror the model, we employ foundry-quality n-channel transistors and a broad range of stress voltages {Vgs,Vds}.